Semiconductor Device and Transistor Cell Having a Diode Region

A semiconductor device, comprising:

• a semiconductor body with a drift region;
• and
• neighboring device cells integrated in the semiconductor body,
• wherein the neighboring device cells each comprise:
• a source region;
• a body region arranged between the source region and the drift region;
• a diode region and a pn junction between the diode region and the drift region;
• a trench with a first sidewall, a second sidewall opposite the first sidewall, and a bottom, the body region adjoining the first sidewall, the diode region adjoining the second sidewall, and the pn junction adjoining the bottom of the trench;
• and
• a gate electrode arranged in the trench and dielectrically insulated from the semiconductor body by a gate dielectric,
• wherein the diode regions of the neighboring device cells together with the drift region act as a JFET (Junction Field-Effect Transistor),
• wherein a region of the drift region between the diode regions of the neighboring device cells forms a channel region of the JFET,
• wherein the drift region has a locally increased doping concentration in the channel region of the JFET.