Back to results
US 2018/0122929 A1Published application
Parasitic channel mitigation using elemental diboride diffusion barrier regions
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorKevin J. Linthicum
Life of this patent
Estimating the term…
Abstract
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Claims14
A semiconductor structure, comprising:
- a substrate comprising silicon and comprising at least a layer having a resistivity of greater than 102 Ohms-cm;
- a diffusion barrier region comprising an elemental diboride located over a surface of the substrate;
- and
- a III-nitride material region located over the diffusion barrier region.
1 more element
A method of forming a semiconductor structure, comprising:
- forming a diffusion barrier region comprising an elemental diboride over a substrate comprising silicon, the substrate comprising at least a layer having a resistivity of greater than 102 Ohms-cm;
- and
- forming a III-nitride material region over the diffusion barrier region.
The semiconductor structure of claim 16, wherein the III-nitride transition layer is compositionally graded.
Dependencies are inferred from the claim text.