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US 2018/0122928 A1Published application
Iii-nitride semiconductor structures comprising spatially patterned implanted species
AssigneeMACOM Technology Solutions Holdings, Inc.
InventorsJohn Claassen Roberts, Kevin J. Linthicum, Allen W. Hanson
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Abstract
III-nitride materials are generally described herein, including material structures comprising III-nitride material regions and silicon-containing substrates. Certain embodiments are related to gallium nitride materials and material structures comprising gallium nitride material regions and silicon-containing substrates.
Claims16
A semiconductor structure, comprising:
- a substrate comprising silicon;
- a III-nitride material region located over a surface region of the substrate;
- and
- an implanted species arranged within the surface region of the substrate in a pattern spatially defined across at least one lateral dimension of the substrate, wherein the implanted species is present within at least a portion of the surface region of the substrate at a concentration of at least about 1019/cm3.
1 more element
Dependencies are inferred from the claim text.