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US 2018/0122925 A1Published application
Superlattice lateral bipolar junction transistor
AssigneeInternational Business Machines Corporation
InventorsKarthik Balakrishnan, Stephen W. Bedell, Pouya Hashemi, Bahman Hekmatshoartabari, Alexander Reznicek
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Abstract
A bipolar junction transistor includes an intrinsic base formed on a substrate. The intrinsic base includes a superlattice stack including a plurality of alternating layers of semiconductor material. A collector and emitter are formed adjacent to the intrinsic base on opposite sides of the base. An extrinsic base structure is formed on the intrinsic base.
Claims9
A method for forming a bipolar junction transistor, comprising:
- patterning an extrinsic base on a superlattice stack including a plurality of alternating layers of semiconductor material on a substrate;
- etching an intrinsic base in the superlattice stack;
- and
- growing a collector and emitter adjacent to the intrinsic base on opposite sides of the intrinsic base.
1 more element
Dependencies are inferred from the claim text.