Semiconductor devices

A semiconductor device, comprising:

• a buffer layer on a substrate;
• a fin structure protruding from the buffer layer;
• and
• a gate electrode running across the fin structure,
• wherein the fin structure comprises:
• a buffer pattern on the buffer layer;
• a channel pattern on the buffer pattern;
• and
• a capping pattern on the channel pattern,
• wherein the capping pattern has a thickness less than a thickness of the channel pattern.

A semiconductor device, comprising:

• a fin structure on a substrate;
• a buffer layer between the substrate and the fin structure;
• device isolation patterns provided on the substrate and disposed on opposite sides of the fin structure, the device isolation patterns being spaced apart from each other along the first direction across the fin structure and extending along a second direction on the substrate;
• a gate structure crossing the fin structure and the device isolation patterns in the first direction;
• and
• a capping layer between the substrate and the devices isolation patterns and between the fin structure and the device isolation patterns, the capping layer having a top surface at a same level as a top surface of the device isolation patterns and at a lower level from the substrate than a top surface of the fin structure.