Laterally diffused metal-oxide-semiconductor field-effect transistor

A laterally diffused metal-oxide-semiconductor field-effect transistor, comprising:

• a substrate, a source, a drain, a body region, and a well region located on the substrate, wherein the well region comprises:
• an inserting type well, P-type doped, wherein the inserting type well is disposed below the drain and is in contact with the drain and the substrate, a width of the inserting type well is less than a width of the drain;
• an N well disposed on a periphery of the inserting type well, the N well being in contact with both sides of the drain;
• and
• a P well disposed on a periphery of the N well and in contact with the N well;
• wherein the laterally diffused metal-oxide-semiconductor field-effect transistor further comprises a closed P-type field limiting ring, the P-type field limiting ring is disposed in the N well and is located at a periphery of the drain and below the drain;
• the inserting type well extends along a longitudinal direction thereof and is in contact with the P-type field limiting ring, the source and the body region are disposed in the P well.