Methods for Forming a Plurality of Semiconductor Devices on a Plurality of Semiconductor Wafers

Abstract

A method for forming a plurality of semiconductor devices on a plurality of semiconductor wafers is provided. The method includes forming an electrically conductive layer on a surface of a first semiconductor wafer so that a Schottky-contact is generated between the electrically conductive layer formed on the first semiconductor wafer and the first semiconductor wafer. A material composition of the electrically conductive layer formed on the first semiconductor wafer is selected based on a value of a physical property of the first semiconductor wafer. The method further includes forming an electrically conductive layer on a surface of a second semiconductor wafer so that a Schottky-contact is generated between the electrically conductive layer formed on the second semiconductor wafer and the second semiconductor wafer. A material composition of the electrically conductive layer formed on the second semiconductor wafer is selected based on a value of the physical property of the second semiconductor wafer. The material composition of the electrically conductive layer formed on the second semiconductor wafer is different from the material composition of the electrically conductive layer formed on the first semiconductor wafer.

Dependencies are inferred from the claim text.