Nanolaminate structure, semiconductor device and method of forming nanolaminate structure

A method of forming a nanolaminate structure, the method comprising:

• forming a first fin and a second fin protruding from a semiconductor substrate, wherein at least one of the first fin and the second fin comprises germanium;
• performing a pre-treatment on the first fin and/or the second fin;
• depositing a first metal oxide layer on the first fin and/or the second fin;
• alternately stacking at least one second metal oxide layer and at least one third metal oxide layer on the first metal oxide layer, thereby forming a nanolaminate structure on the first metal oxide layer;
• and
• forming a metal gate layer on the first fin and/or the second fin,
• wherein the first metal oxide layer comprises hafnium oxide (HfO2), and the first metal oxide layer and the third metal oxide layer respectively comprise aluminum oxide (Al2O3), lanthanum oxide (La2O3) or yttrium oxide (Y2O3).

A semiconductor device, comprising:

• a semiconductor substrate;
• a fin disposed on the semiconductor substrate;
• a nanolaminate structure, wherein the nanolaminate structure comprises:
• a first metal oxide layer disposed on the fin;
• and
• a plurality of second oxide layers and a plurality of third metal oxide layers alternately stacked on the first metal oxide layer,
• wherein one of the plurality of the second metal oxide layers is directly disposed on the first metal oxide layer, the plurality of the second metal oxide layers comprise hafnium oxide (HfO2), and the first metal oxide layer and the plurality of the third metal oxide layers respectively comprise aluminum oxide (Al2O3), lanthanum oxide (La2O3) or yttrium oxide (Y2O3);
• and a metal gate disposed on the nanolaminate structure.