Ring-type field effect transistor for terahertz wave detection, which uses gate metal as antenna
AssigneeUnist (Ulsan National Institute of Science and Technology)
InventorsKyung Rok KIM, Min Woo RYU, Sang Hyo AHN
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Abstract
A ring-type FET may include a silicon base, a source formed on a portion of the silicon base through doping, a channel formed to encompass the source on a plane, a drain formed outside the channel, a dielectric layer formed on the source, the channel and the drain, and a gate provided on the dielectric layer, wherein a center of the source is spaced apart from a center of the channel, and the gate is formed of a metal material, disposed above the channel and configured to cover an upper face of the channel and overlap a portion of the source and a portion of the drain.
Claims6
A ring-type field-effect transistor for detecting a terahertz wave using a gate metal as an antenna, the ring-type field-effect transistor comprising:
- a silicon base;
- a source formed on a portion of the silicon base through doping;
- a channel formed to encompass the source on a plane;
- a drain formed outside the channel;
- a dielectric layer formed on the source, the channel and the drain;
- and
- a gate provided on the dielectric layer,
- wherein a center of the source is spaced apart from a center of the channel, and
- the gate is formed of a metal material, disposed above the channel and configured to cover an upper face of the channel and overlap a portion of the source and a portion of the drain.
Dependencies are inferred from the claim text.