Semiconductor device and method of manufacturing the same
AssigneeHyundai Motor Company
InventorsNackYong JOO, Youngkyun JUNG, Junghee PARK, JongSeok LEE, Dae Hwan CHUN
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Abstract
A semiconductor device according to an exemplary embodiment of the present invention includes: a current applying region; and a termination region disposed at an end portion of the current applying region. The termination region includes: an n− type layer disposed on a first surface of an n+ type silicon carbide substrate; a p type termination structure disposed in the n− type layer; and a lower gate runner disposed on the p type termination structure such that the lower gate runner overlaps the p type termination structure.
Claims20
A semiconductor device, comprising:
- a current applying region;
- and
- a termination region disposed at an end portion of the current applying region,
- wherein the termination region includes:
- an n− type layer disposed on a first surface of an n+ type silicon carbide substrate;
- a p type termination structure disposed in the n− type layer;
- and
- a lower gate runner disposed on the p type termination structure such that the lower gate runner overlaps the p type termination structure.
A method of manufacturing a semiconductor device, the method comprising steps of:
- forming an n− type layer on a first surface of an n+ type silicon carbide substrate including a current applying region and a termination region disposed at an end portion of the current applying region;
- forming an n+ type region on the n− type layer of the current applying region;
- forming a first trench and a second trench, which are spaced apart from each other, in the n− type layer of the current applying region by etching the n+ type region and the n− type layer;
- forming a p type region in a lower portion and both side surfaces of the second trench, and forming a p type termination structure in the n− type layer of the termination region;
- forming a gate electrode within the first trench, and forming a lower gate runner, which is disposed on the p type termination structure and overlaps the p type termination structure;
- forming a source electrode on the n+ type region, on the gate electrode, and within the second trench;
- and
- forming a drain electrode on a second surface of the n+ type silicon carbide substrate.
Dependencies are inferred from the claim text.