Semiconductor device and method of formation
AssigneesTaiwan Semiconductor Manufacturing Company, Ltd., National Taiwan University
InventorsMeng-Yu LIN, Shih-Yen LIN, Si-Chen LEE
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Abstract
A semiconductor device and method of formation are provided. The semiconductor device includes a substrate, a first active area over the substrate, a second active area over the substrate, a graphene channel between the first active area and the second active area, and a first in-plane gate. In some embodiments, the graphene channel, the first in-plane gate, the first active area, and the second active area include graphene. A method of forming the first in-plane gate, the first active area, the second active area, and the graphene channel from a single layer of graphene is also provided.
Claims20
A method of forming a semiconductor device, comprising:
- forming a dielectric layer;
- forming a carbon layer over the dielectric layer;
- forming a metal layer over the carbon layer;
- performing an anneal process, wherein at least some of the carbon layer is transformed into graphene during the anneal process;
- removing the metal layer after performing the anneal process;
- and
- etching the graphene to define a channel from the graphene.
A method of forming a semiconductor device, comprising:
- forming a carbon layer;
- performing an anneal process, wherein at least some of the carbon layer is transformed into graphene during the anneal process;
- and
- etching the graphene to define a channel and a gate from the graphene, wherein, after the etching, a top surface of the channel and a top surface of the gate are co-planar.
A method of forming a semiconductor device, comprising:
- forming a carbon layer over a dielectric layer;
- patterning the carbon layer to define a patterned carbon layer;
- forming a metal layer over the patterned carbon layer and the dielectric layer;
- performing a lift off process to remove at least some of the metal layer;
- and
- performing an anneal process, wherein at least some of the carbon layer is transformed into graphene during the anneal process to form a channel from the patterned carbon layer.
Dependencies are inferred from the claim text.