Techniques for Forming FINFET Transistors with Same Fin Pitch and Different Source/Drain Epitaxy Configurations

A finFET device, comprising:

• fins formed in a substrate, wherein at least one of the fins is formed in a first region of the substrate and at least another one of the fins is formed in a second region of the substrate, wherein the fins in the first region of the substrate have a uniform width and the fins in the second region of the substrate have a base that is wider than the fins in the first region of the substrate;
• an insulator between the fins, wherein the insulator is recessed to expose a top portion of the fins in a channel region of the finFET device, and wherein the insulator is further recessed to expose a bottom portion of the fins in source and drain regions of the finFET device;
• at least one gate over the fins in the channel region;
• and
• an epitaxial material in the source and drain regions that is un-merged in the first region of the substrate yet is merged in the second region of the substrate due to the base of the fins in the second region of the substrate being wider than the fins in the first region of the substrate,
• wherein the at least one gate comprises at least one given gate line that covers both the fins in the first region of the substrate and the fins in the second region of the substrate such that the given gate line serves as the at least one gate for multiple finFETs, some of the finFETs having the epitaxial material in the source and drain regions that is un-merged and other of the finFETs having the epitaxial material in the source and drain regions that is merged.