Loading patent…
AssigneeInternational Business Machines Corporation
InventorsKangguo Cheng, Ruilong Xie, Tenko Yamashita, Chun-chen Yeh
Estimating the term…
Embodiments are directed to a method of fabricating inner spacers of a nanosheet FET. The method includes forming sacrificial and channel nanosheets over a substrate, removing sidewall portions of the sacrificial nanosheet, and forming a dielectric that extends over the channel nanosheet and within a space that was occupied by the removed sidewall portions of the sacrificial nanosheet. The method further includes forming a top protective spacer over the channel nanosheet and the dielectric, as well as applying a directional etch to the top protective spacer, the channel nanosheet, and the dielectric, wherein the directional etch is configured to be selective to the channel nanosheet and the dielectric, wherein the directional etch is configured to not be selective to the top protective spacer, and wherein applying the directional etch etches portions of the channel nanosheet and portions of the flowable dielectric that are not under the top dielectric.
A nanosheet field effect transistor device comprising:
A nanosheet field effect transistor comprising:
A nanosheet field effect transistor device comprising:
Dependencies are inferred from the claim text.