US 2018/0122898 A1 · SEMICONDUCTOR DEVICE WITH AIR GAP AND METHOD FOR FABRICATING THE SAME

Abstract

A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

Claims18

Dependent claims

A method for fabricating a semiconductor device, comprising:

forming a conductive structure over a substrate, the conductive structure including a first plug and a conductive line over the first plug;
forming a dielectric plug at both sidewalls of the first plug, the dielectric plug including a sacrificial liner, the sacrificial liner having a first thickness;
forming a spacer at both sidewalls of the conductive line, the spacer including a sacrificial spacer, the sacrificial spacer having a second thickness;
forming a first air gap at the both sidewalls of the conductive line by removing the sacrificial spacer;
and
forming a second air gap at the both sidewalls of the first plug by removing a part of the sacrificial liner.

3 more elements

Dependencies are inferred from the claim text.

Semiconductor device with air gap and method for fabricating the same

Life of this patent

Semiconductor device with air gap and method for fabricating the same

Life of this patent

Abstract

Claims18