Semiconductor device and method for fabricating the same
AssigneeUnited Microelectronics Corp.
InventorsWANXUN HE, Su Xing
Life of this patent
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Abstract
A method for fabricating semiconductor device includes the steps of first providing a substrate, forming a gate structure on the substrate, forming a hard mask on the substrate and the gate structure, patterning the hard mask to form trenches exposing part of the substrate, and forming raised epitaxial layers in the trenches. Preferably, the gate structure is extended along a first direction on the substrate and the raised epitaxial layers are elongated along a second direction adjacent to two sides of the gate structure.
Claims19
A method for fabricating semiconductor device, comprising:
- providing a substrate;
- forming a gate structure on the substrate;
- forming a hard mask on the substrate and the gate structure;
- patterning the hard mask to form trenches exposing part of the substrate;
- and
- forming raised epitaxial layers in the trenches.
A semiconductor device, comprising:
- a gate structure extending along a first direction on a substrate;
- a first spacer adjacent to the gate structure;
- a plurality of raised epitaxial layers extending along a second direction on the substrate and adjacent to two sides of the gate structure, wherein a sidewall of the raised epitaxial layers directly contacts a sidewall of the first spacer;
- and
- a silicide layer extending along the first direction and directly contacting top surfaces and sidewalls of the plurality of raised epitaxial layers and the substrate between the plurality of raised epitaxial layers.
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18-19. (canceled)
Dependencies are inferred from the claim text.