Semiconductor device resistor structure
AssigneeGlobalfoundries Inc.
InventorsHui Zang, Josef S. Watts, Shesh M. Pandey
Life of this patent
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Abstract
A resistor body is separated from a doped well in a substrate by a resistor dielectric material layer. The doped well is defined by at least one doped region and can include a dopant gradient in the doped well to reduce parasitic capacitance of the resistor structure while retaining heat dissipation properties of the substrate. The resistor body is formed in a cavity in a dielectric layer deposited on the substrate, which deposition can be part of a concurrent fabrication, such as part of forming shallow trench isolations, and the cavity can be lined with the resistor dielectric material.
Claims7
A method of making a semiconductor device resistor structure, the method comprising:
- providing a first semiconductor layer including a first semiconductor material;
- depositing a support dielectric material on the first semiconductor layer to form a support dielectric layer on a surface of the first semiconductor layer;
- forming a plurality of cavities in the support dielectric layer, each cavity extending from a surface of the support dielectric layer to the surface of the first semiconductor layer;
- forming a well in the first semiconductor layer by doping the first semiconductor layer to form at least one doped region, the plurality of cavities including at least one resistor cavity over the well;
- depositing a resistor dielectric layer on at least the surface of the first semiconductor layer exposed in the plurality of cavities;
- and
- forming a resistor body in each resistor cavity and on the resistor dielectric layer.
Dependencies are inferred from the claim text.