US 2018/0122884 A1 · SEMICONDUCTOR DEVICE

Abstract

Semiconductor elements deteriorate or are destroyed due to electrostatic discharge damage. The present invention provides a semiconductor device in which a protecting means is formed in each pixel. The protecting means is provided with one or a plurality of elements selected from the group consisting of resistor elements, capacitor elements, and rectifying elements. Sudden changes in the electric potential of a source electrode or a drain electrode of a transistor due to electric charge that builds up in a pixel electrode is relieved by disposing the protecting means between the pixel electrode of the light-emitting element and the source electrode or the drain electrode of the transistor. Deterioration or destruction of the semiconductor element due to electrostatic discharge damage is thus prevented.

Claims21

Dependent claims

(canceled)

A pixel circuit implementing a circuit diagram comprising:

a semiconductor layer, a first transistor, a second transistor and a capacitor element,
wherein the first transistor includes:
a first part of the semiconductor layer;
and
a gate electrode,
wherein the first part of the semiconductor layer includes a curved region in a top view of the pixel circuit,
wherein an entire part of the curved region and at least a part of the gate electrode of the first transistor overlap each other,
wherein, in the circuit diagram, the gate electrode of the first transistor is directly connected to a first terminal of the second transistor,
wherein, in the circuit diagram, a first terminal of the capacitor element is directly connected to the gate electrode of the first transistor, and
wherein the first terminal of the capacitor element is a second part of the semiconductor layer.

7 more elements

A pixel circuit implementing a circuit diagram comprising:

a semiconductor layer, a first transistor, a second transistor and a capacitor element,
wherein the first transistor includes:
a first part of the semiconductor layer;
and
a gate electrode,
wherein the first part of the semiconductor layer includes a curved region in a top view of the pixel circuit,
wherein an entire part of the curved region and at least a part of the gate electrode of the first transistor overlap each other,
wherein a channel length of the first transistor is larger than a channel length of the second transistor,
wherein, in the circuit diagram, the gate electrode of the first transistor is directly connected to a first terminal of the second transistor,
wherein, in the circuit diagram, a first terminal of the capacitor element is directly connected to the gate electrode of the first transistor,
wherein the first terminal of the capacitor element is a second part of the semiconductor layer,
wherein each of the first transistor, the second transistor and the capacitor element is over a laminate film including a first layer and a second layer,
wherein the first layer includes nitrogen and silicon, and
wherein the second layer includes oxygen and silicon.

11 more elements

Dependencies are inferred from the claim text.

Facts

Application

15/845,459Filed 18 Dec 2017

Priority

JP 2002-1649705 Jun 2002

Published

3 May 2018

Term ends

Not estimatedThe source records don’t support an estimate.

Classification18 codes

H10K 59/1213
Characterised by the geometry or disposition of pixel elements: the pixel elements being TFTs
G09G 3/3233
Using an active matrix: with pixel circuitry controlling the current through the light-emitting element
H10D 30/6731
Characterised by the shapes, relative sizes or dispositions of the gate electrodes: top-gate only TFTs
H10D 30/6745
Silicon: polycrystalline or microcrystalline silicon

Family

Application10/453,940Continuation · filed 4 Jun 2003

Application12/506,465Continuation · filed 21 Jul 2009

Application13/223,582Continuation · filed 1 Sep 2011

Application14/143,652Continuation · filed 30 Dec 2013

Application14/618,261Continuation · filed 10 Feb 2015

Application15/074,255Continuation · filed 18 Mar 2016

Application15/845,459Continuation

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