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AssigneeInstitute of Microelectronics, Chinese Academy of Sciences
InventorsWRITAM BANERJEE, MING LIU, QI LIU, HANGBING LV, HAITAO SUN, KANGWEI ZHANG
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A nonvolatile resistive switching memory comprising an insulating substrate, a lower electrode, a lower graphene barrier layer, a resistive switching functional layer, an upper graphene barrier layer, and an upper electrode, wherein the lower and/or the upper graphene barrier layer is/are capable of preventing the metal ions/atoms in the lower/upper metal electrode from diffusing into the resistive switching functional layer under an applied electric field. According to the nonvolatile resistive switching memory device of the present invention and manufacturing method thereof, a monolayer or multilayer graphene film as a metal ions/atoms barrier layer is inserted between the upper/lower metal electrode and the resistive switching functional layer, which is capable of preventing the metal ions/atoms in the lower/upper metal electrode from diffusing into the resistive switching functional layer during the programming or erasing process of the resistive switching device, thereby improving the reliability of the device.
A nonvolatile resistive switching memory comprising an insulating substrate, a lower electrode, a lower graphene barrier layer, a resistive switching functional layer, an upper graphene barrier layer, and an upper electrode, wherein the lower and/or the upper graphene barrier layer is/are capable of preventing the metal ions/atoms in the lower and upper metal electrodes from diffusing into the resistive switching functional layer under an applied electric field.
A method of manufacturing the nonvolatile resistive switching memory comprising:
Dependencies are inferred from the claim text.