Magnetic random access memory and manufacture thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorsZhuofan CHEN, Yibin SONG, Haiyang ZHANG
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Abstract
A magnetic random access memory and its manufacturing method related to semiconductor techniques. The magnetic random access memory comprises a word line, a bit line, and a memory unit positioned between the word line and the bit line, wherein the memory unit comprises a fixture layer connecting the bit line, a free layer connecting the word line, and an insulation layer positioned between the fixture layer and the free layer. This magnetic random access memory has a simpler design than conventional devices and can be manufactured more easily, which improves the integrity of the manufacturing process.
Claims16
A magnetic random access memory device, comprising:
- a word line;
- a bit line;
- and
- a memory unit positioned between the word line and the bit line, comprising:
- a fixture layer connecting the bit line;
- a free layer connecting the word line;
- and
- an insulation layer positioned between the fixture layer and the free layer.
A method for manufacturing a magnetic random access memory device, comprising:
- providing a plurality of sacrificial layers and a plurality of dielectric layers alternately stacking over each other;
- forming a through-hole by etching the sacrificial layers and the dielectric layers;
- forming an insulation layer on a side surface of the through-hole;
- forming a fixture layer on a side surface of the insulation layer;
- forming a bit line on a side surface of the fixture layer, wherein the bit line filling the through-hole;
- forming a plurality of cavities by removing the sacrificial layers;
- and
- forming a plurality of free layers within the cavities and word lines connecting the free layers, wherein the neighboring free layers are separated by the dielectric layers.
Dependencies are inferred from the claim text.