Light-emitting diode chip

A light-emitting-diode (LED) chip, comprising:

• a substrate;
• a conductive layer disposed on the substrate;
• a first insulator layer disposed on the conductive layer and having a first opening and a second opening;
• a light-emitting component disposed on the first insulator layer and comprising a first semiconductor layer, a first quantum well layer, and a second semiconductor layer, wherein the first semiconductor layer is disposed between the first insulator layer and the second semiconductor layer, and the first quantum well layer is disposed between the first semiconductor layer and the second semiconductor layer, wherein the conductive layer passes through the first semiconductor layer and the first quantum well layer via the first opening of the first insulator layer, so as to be extended and electrically connected to the second semiconductor layer, and the first semiconductor layer is isolated from the conductive layer by the first insulator layer;
• and
• an electrical static discharge (ESD) protection component disposed on the first insulator layer and separated from the light-emitting component, wherein the ESD protection component comprises a third semiconductor layer, a second quantum well layer, and a fourth semiconductor layer, wherein the third semiconductor layer is disposed between the conductive layer and the fourth semiconductor layer, and the second quantum well layer is disposed between the third semiconductor layer and the fourth semiconductor layer, wherein the conductive layer is electrically connected to the third semiconductor layer through the second opening of the first insulator layer, wherein each of the first semiconductor layer and the third semiconductor layer has a first type dopant, each of the second semiconductor layer and the fourth semiconductor layer has a second type dopant, and the first semiconductor layer and the fourth semiconductor layer are electrically isolated from each other before packaging the LED chip.