Semiconductor Device with a Radiation Sensing Region and Method for Forming the Same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsTsung-Han Tsai, Yun-Wei Cheng, Kuo-Cheng Lee, Chun-Hao Chou, Yung-Lung Hsu
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Abstract
A semiconductor device includes a semiconductor substrate, a radiation-sensing region, at least one isolation structure, and a doped passivation layer. The radiation-sensing region is present in the semiconductor substrate. The isolation structure is present in the semiconductor substrate and adjacent to the radiation-sensing region. The doped passivation layer at least partially surrounds the isolation structure in a substantially conformal manner.
Claims20
A semiconductor device comprising:
- a semiconductor substrate;
- a radiation-sensing region present in the semiconductor substrate;
- and
- at least one isolation structure present in the semiconductor substrate and adjacent to the radiation-sensing region;
- and
- a doped passivation layer at least partially surrounding the at least one isolation structure in a substantially conformal manner, wherein the doped passivation layer extends along an external surface of the semiconductor substrate.
A semiconductor device comprising:
- a semiconductor substrate;
- a radiation-sensing region present in the semiconductor substrate;
- and
- at least one isolation structure present in the semiconductor substrate and adjacent to the radiation-sensing region;
- and
- a doped passivation layer at least partially surrounding the at least one isolation structure in a substantially conformal manner, wherein the doped passivation layer extends between a first one of the at least one isolation structure to a second one of the at least one isolation structure.
A semiconductor device comprising:
- a semiconductor substrate;
- a radiation-sensing region present in the semiconductor substrate;
- and
- at least one isolation structure present in the semiconductor substrate and adjacent to the radiation-sensing region;
- and
- a doped passivation layer at least partially surrounding the isolation structure in a substantially conformal manner, wherein the doped passivation layer extends from a first side of the semiconductor substrate to a second side of the semiconductor substrate opposite the first side.
Dependencies are inferred from the claim text.