Imaging panel and x-ray imaging device including same

Abstract

A shift of a threshold voltage of a thin film transistor upon X-ray irradiation is suppressed. An imaging panel having a plurality of pixels, for picking up scintillation light obtained by converting X-ray projected from an X-ray source, with use of a scintillator, includes photodiodes 15, TFTs 14, and an organic film 43. The photodiodes 15 are provided at the pixels, respectively, for receiving the scintillation light and converting the same into charges. The TFTs 14 are provided at the pixels, respectively, for reading the charges obtained through the conversion by the photodiodes 15. Each TFT 14 includes an oxide semiconductor layer 142, a gate electrode 141, as well as a source electrode 143S and a drain electrode 143D formed on a part of the oxide semiconductor layer 142. In one pixel area of the pixels, an area where the organic film 43 does not exist exists in a layer at an upper position with respect to the TFTs 14, other than an area where a contact hole CH1 for connecting the photodiode 15 and the drain electrode 143D is provided.

Dependencies are inferred from the claim text.