Display device and method for manufacturing display device
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorShunpei YAMAZAKI
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Abstract
A highly flexible display device and a method for manufacturing the display device are provided. A transistor including a light-transmitting semiconductor film, a capacitor including a first electrode, a second electrode, and a dielectric film between the first electrode and the second electrode, and a first insulating film covering the semiconductor film are formed over a flexible substrate. The capacitor includes a region where the first electrode and the dielectric film are in contact with each other, and the first insulating film does not cover the region.
Claims18
(canceled)
A display device comprising:
- a flexible substrate;
- a first gate electrode over the flexible substrate;
- a first insulating film comprising silicon and oxygen over the first gate electrode;
- an oxide semiconductor film over and in contact with the first insulating film, the oxide semiconductor film comprising indium, gallium, and zinc;
- a second insulating film over the oxide semiconductor film;
- a second gate electrode over the second insulating film, the second gate electrode overlapping with the oxide semiconductor film and the first gate electrode;
- a source electrode in contact with the oxide semiconductor film;
- a drain electrode in contact with the oxide semiconductor film;
- a third insulating film over the second insulating film;
- and
- a capacitor over the flexible substrate, the capacitor comprising:
- a first electrode over and in contact with the first insulating film, the first electrode comprising indium, gallium, and zinc;
- the third insulating film over and in contact with the first electrode;
- and
- a second electrode over the third insulating film,
- wherein the first electrode is electrically connected to one of the source electrode and the drain electrode, and
- wherein the first electrode comprises a portion which does not overlap with the second insulating film.
A display device comprising:
- a flexible substrate;
- a first gate electrode over the flexible substrate;
- a first insulating film comprising silicon and oxygen over the first gate electrode;
- an oxide semiconductor film over and in contact with the first insulating film, the oxide semiconductor film comprising indium, gallium, and zinc;
- a second insulating film over the oxide semiconductor film;
- a second gate electrode over the second insulating film, the second gate electrode overlapping with the oxide semiconductor film and the first gate electrode;
- a third insulating film over the second insulating film;
- and
- a capacitor over the flexible substrate, the capacitor comprising:
- a first electrode over and in contact with the first insulating film, the first electrode comprising indium, gallium, and zinc;
- the third insulating film over and in contact with the first electrode;
- and
- a second electrode over the third insulating film,
- wherein the first electrode comprises a portion which does not overlap with the second insulating film, and
- wherein a portion of the second electrode is over the second insulating film and the third insulating film.
A display device comprising:
- a flexible substrate;
- a first gate electrode over the flexible substrate;
- a first insulating film comprising silicon and oxygen over the first gate electrode;
- an oxide semiconductor film over and in contact with the first insulating film, the oxide semiconductor film comprising indium, gallium, and zinc;
- a second insulating film over the oxide semiconductor film;
- a second gate electrode over the second insulating film, the second gate electrode overlapping with the oxide semiconductor film and the first gate electrode;
- a source electrode in contact with the oxide semiconductor film;
- a drain electrode in contact with the oxide semiconductor film;
- a third insulating film over the second insulating film;
- a capacitor over the flexible substrate, the capacitor comprising:
- a first electrode over and in contact with the first insulating film, the first electrode comprising indium, gallium, and zinc;
- the third insulating film over and in contact with the first electrode;
- and
- a second electrode over the third insulating film;
- a fourth insulating film over the second gate electrode and the capacitor;
- and
- a light-emitting element over the fourth insulating film, the light-emitting element comprising:
- a third electrode comprising a light-transmitting conductive material;
- a light emitting layer over the third electrode;
- and
- a fourth electrode over the light emitting layer,
- wherein the first electrode is electrically connected to one of the source electrode and the drain electrode, and
- wherein the first electrode comprises a portion which does not overlap with the second insulating film.
Dependencies are inferred from the claim text.