Method of manufacturing semiconductor device

A method of manufacturing a semiconductor device, comprising:

• forming a metal oxide film in an amorphous state, on a substrate;
• crystallizing the metal oxide film;
• removing a surface layer of the metal oxide film that is crystallized;
• forming a first conductive layer covering the metal oxide film;
• and
• forming a second conductive layer covering the first conductive layer.

A method of manufacturing a semiconductor device, comprising:

• forming a gate dielectric on a substrate;
• and
• forming a gate electrode,
• wherein the forming of the gate dielectric includes sequentially forming layers of different dielectric materials including an amorphous metal oxide film, heat-treating the amorphous metal oxide film until the amorphous metal oxide film crystallizes, and etching away the surface layer of the metal oxide film that has crystallized, and
• the forming of the gate electrode includes forming a layer of metal against the metal oxide film from which the surface layer has been etched away.