Threshold voltage modulation through channel length adjustment
AssigneeInternational Business Machines Corporation
InventorsRuqiang Bao, Dechao Guo, Derrick Liu, Huimei Zhou
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Abstract
A method of forming an arrangement of long and short fins on a substrate, including forming a plurality of finFET devices having long fins on the substrate, where the long fins have a fin length in the range of about 180 nm to about 350 nm, and forming a plurality of finFET devices having short fins on the substrate, where the short fins have a fin length in the range of about 60 nm to about 140 nm, wherein at least one of the plurality of finFET devices having a long fin is adjacent to at least one of the plurality of finFET devices having a short fin.
Claims20
A method of forming an arrangement of long fin and short fin devices on a substrate, comprising:
- forming a plurality of long fins on the substrate;
- forming a plurality of short fins on the substrate, wherein the short fins are shorter than the long fins;
- forming a first active gate across the plurality of long fins;
- and
- forming a second active gate across the plurality of short fins, wherein at least one of the plurality of long fins is adjacent to at least one of the plurality of short fins.
A method of forming an arrangement of long fin and short fin devices on a substrate, comprising:
- forming a plurality of long fins on the substrate, wherein the one or more long fins have a fin length in the range of about 180 nm to about 350 nm;
- forming a plurality of short fins on the substrate, wherein the one or more short fins have a fin length in the range of about 60 nm to about 140 nm;
- forming a first active gate across the plurality of long fins;
- forming a second active gate across the plurality of short fins, wherein at least one of the plurality of long fins is adjacent to at least one of the plurality of short fins;
- and
- forming four dummy gates, wherein two dummy gates are on the plurality of long fins on a first side of the first active gate and two dummy gates are on the opposite side of the first active gate, and wherein a first of the two dummy gates on each side is between the second of the two dummy gates and the first active gate, and the second of the two dummy gates are on opposite ends of the plurality of long fins.
A method of forming an arrangement of long fin and short fin devices on a substrate, comprising:
- forming a plurality of long fins on the substrate, wherein the one or more long fins have a fin length in the range of about 180 nm to about 350 nm;
- forming a plurality of short fins on the substrate, wherein the one or more short fins have a fin length in the range of about 60 nm to about 140 nm;
- forming a first active gate across the plurality of long fins to form a long fin device;
- forming a second active gate across the plurality of short fins to form a short fin device, wherein at least one of the plurality of long fins is adjacent to at least one of the plurality of short fins;
- and
- forming four dummy gates, wherein two dummy gates are on the plurality of long fins on a first side of the first active gate and two dummy gates are on the opposite side of the first active gate, and wherein a first of the two dummy gates on each side is between the second of the two dummy gates and the first active gate, and the second of the two dummy gates are on opposite ends of the plurality of long fins, and wherein the one or more long fins have a threshold voltage in the range of about 260 mV to about 220 mV.
Dependencies are inferred from the claim text.