Back to results
US 2018/0122812 A1Published application
Memory cell structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorJhon Jhy Liaw
Life of this patent
Estimating the term…
Abstract
Provided is a memory cell including a rectangular shaped via for at least one Vss node connection. In some embodiments, the rectangular shaped via has a length/width of greater than 1.5. The rectangular shaped via may be disposed on the Via0 and/or Via1 layer interfacing a first metal layer (e.g., M1). The memory cell may also include circular/square shaped vias having a length/width of between approximately 0.8 and 1.2. The circular/square shaped vias may be coplanar with the rectangular shaped vias.
Claims20
A memory device comprising:
- an SRAM memory cell including:
- a transistor;
- a Vss node component on a first metallization layer;
- and
- a via interfacing the first metallization layer and coupling the Vss node component and the transistor, wherein the via has a length and a width, the length at least 1.5 times that of the width.
2 more elements
A memory device comprising:
- a pull-down transistor comprising a gate structure, a source and a drain;
- an extended contact having a length at least three times a width and interfacing the source;
- a first via above and interfacing the extended contact, wherein the first via has a rectangular shape having a length at least 1.5 times a width;
- and
- a first Vss landing pad disposed on the first metallization layer, wherein the first Vss landing pad interfaces the first via.
2 more elements
A memory device, comprising:
- two cross-coupled inverters;
- a first pass-gate device and a second pass-gate device coupled to a respective one of the two cross-coupled inverters;
- an extended contact connected to a source node of a pull-down device of one of the two cross-coupled inverters;
- a first via disposed over and interfacing the extended contact structure, the first via having a rectangular shape;
- a first Vss landing pad disposed on a first metallization layer above and interfacing the first via;
- and
- a second via disposed over and interfacing the first Vss landing pad, wherein the second via has the rectangular shape.
4 more elements
Dependencies are inferred from the claim text.