Semiconductor device

A semiconductor device, comprising:

• an interlayer insulating layer disposed on a substrate;
• an upper support layer including a first portion covering an upper surface of the interlayer insulating layer and a second portion formed to extend in a horizontal direction from the first portion;
• a contact structure penetrating the first portion of the upper support layer and the interlayer insulating layer;
• and
• a data storage element disposed on the substrate and spaced apart from the contact structure,
• the data storage element including a first electrode spaced apart from the interlayer insulating layer, a dielectric on the first electrode, and a second electrode on the dielectric,
• an upper side surface of the first electrode being surrounded by the second portion of the upper support layer,
• an upper side surface of the contact structure being surrounded by the first portion of the upper support layer and being in contact with the first portion,
• at least a portion of the upper side surface of the first electrode being in contact with the second portion of the upper support layer,
• the second electrode covering an upper surface of the second portion of the upper support layer.

A semiconductor device, comprising:

• a first interlayer insulating layer disposed on a substrate;
• a second interlayer insulating layer on the first interlayer insulating layer;
• a first support layer between the first interlayer insulating layer and the second interlayer insulating layer;
• a second support layer on an upper surface of the second interlayer insulating layer;
• a first electrode disposed on the substrate and spaced apart from the first and second interlayer insulating layers;
• a contact structure disposed on the substrate and penetrating the first interlayer insulating layer, the first support layer, the second interlayer insulating layer and the second support layer;
• a dielectric conformally covering the first electrode;
• and
• a second electrode on the dielectric,
• wherein the second support layer includes a first portion covering an upper surface of the second interlayer insulating layer and surrounding an upper side surface of the contact structure, and a second portion extending in a horizontal direction from the first portion and contacting a portion of an upper side surface of the first electrode.