Dynamic random access memory structure and manufacturing method thereof
AssigneeWinbond Electronics Corp.
InventorChih-Hao Lin
Life of this patent
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Abstract
A manufacturing method of a dynamic random access memory (DRAM) structure includes following steps. A substrate is provided, wherein the substrate includes a memory cell region and a peripheral circuit region. A DRAM is formed in the memory cell region and includes a capacitor contact coupled to a capacitor structure. A transistor structure with a metal gate structure is formed in the peripheral circuit region. The metal gate structure is formed by a manufacturing process using a dummy gate. The capacitor contact and the dummy gate are formed by the same conductive layer.
Claims20
A method of manufacturing a dynamic random access memory (DRAM) structure, comprising:
- providing a substrate, wherein the substrate comprises a memory cell region and a peripheral circuit region;
- forming a DRAM in the memory cell region, wherein the DRAM comprises a capacitor contact coupled to a capacitor structure;
- and
- forming a transistor structure with a metal gate structure in the peripheral circuit region, wherein the metal gate structure is formed by a manufacturing process using a dummy gate, wherein
- the capacitor contact and the dummy gate are formed by the same conductive layer.
A dynamic random access memory (DRAM) structure, comprising:
- a substrate, comprising a memory cell region;
- a DRAM, disposed in the memory cell region, wherein the DRAM comprises a capacitor contact coupled to a capacitor structure;
- and
- a guard ring structure, surrounding a border of the memory cell region, wherein the capacitor contact and the guard ring structure originate from the same conductive layer.
Dependencies are inferred from the claim text.