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US 2018/0122808 A1Published application
Methods and apparatuses including an active area of a tap intersected by a boundary of a well
AssigneeMicron Technology, Inc.
InventorMichael Smith
Life of this patent
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Abstract
Apparatuses and methods are disclosed. One such apparatus includes a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity. A boundary of the well intersects an active area of a tap to the well.
Claims20
An apparatus comprising:
- a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity;
- and
- a tap to the well comprising an active area having a lightly doped area outside a boundary of the well, and a more heavily doped area outside a boundary of the semiconductor structure.
An apparatus comprising:
- a well having a first type of conductivity formed within a semiconductor structure having a second type of conductivity;
- and
- a tap to the well comprising an active area having a lightly doped area over the semiconductor structure and outside a boundary of the well, and a more heavily doped area over the well and outside a boundary of the semiconductor structure.
Dependencies are inferred from the claim text.