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US 2018/0122807 A1Published application
Semiconductor device and method of forming the semiconductor device
AssigneeInternational Business Machines Corporation
InventorsBrent Alan ANDERSON, Shawn P. FETTEROLF, Terence B. HOOK
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Abstract
A semiconductor device includes a semiconductor fin formed on a substrate, a first gate formed around the semiconductor fin, and a second gate formed around the semiconductor fin below the first gate and separated from the first gate.
Claims20
A semiconductor device comprising:
- a semiconductor fin formed on a substrate;
- a first gate formed around the semiconductor fin;
- and
- a second gate formed around the semiconductor fin below the first gate and separated from the first gate.
1 more element
A semiconductor device comprising:
- a semiconductor fin formed on a substrate;
- a first gate formed around the semiconductor fin;
- and
- a second gate formed around the semiconductor fin below the first gate and separated from the first gate,
- wherein the semiconductor fin comprises an undoped region between the first and second gates, and the undoped region is gated by a fringing effect which couples the first and second gates.
2 more elements
A semiconductor device comprising:
- forming a semiconductor fin formed on a substrate;
- forming a first gate formed around the semiconductor fin;
- and
- forming a second gate formed around the semiconductor fin below the first gate and separated from the first gate.
1 more element
Dependencies are inferred from the claim text.