Special construct for continuous non-uniform active region finfet standard cells

A device comprising:

• a first cell having a first drain diffusion region and a first source diffusion region and a second cell having a second drain diffusion region and a second source diffusion region;
• a gate at a boundary between the first and second cells;
• a continuous drain diffusion region having an upper portion crossing the gate and encompassing first drain diffusion region and a first part of the second drain diffusion region and having a lower portion beginning over the gate and encompassing a second part of the second drain diffusion region;
• a continuous source diffusion region having a lower portion crossing the gate and encompassing the first source diffusion region and a first part of the second source diffusion region and having an upper portion beginning over the gate and encompassing a second part of the second source diffusion region;
• and
• a mask over the gate between, but separated from, the continuous drain diffusion region and the continuous source diffusion region.

A device comprising:

• abutted first and second cells having continuous and non-uniform active regions, wherein the active regions comprise source/drain (S/D) diffusion regions and fins,
• wherein the active region of the second cell extends to an edge or center of a dummy gate, the dummy gate being at a boundary between the first and second cells,
• wherein the fins are cut at the edge of the dummy gate or the center of the dummy gate, and
• wherein the first cell and the second cell are at the same potential.