Forming on-chip metal-insulator-semiconductor capacitor
AssigneeInternational Business Machines Corporation
InventorsZhenxing Bi, Kangguo Cheng, Peng Xu, Chen Zhang
Life of this patent
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Abstract
A method is presented for forming a semiconductor structure. The method includes forming a plurality of fins on a first region of the semiconductor substrate, forming a bi-polymer structure, selectively removing the first polymer of the bi-polymer structure and forming deep trenches in the semiconductor substrate resulting in pillars in a second region of the semiconductor structure. The method further includes selectively removing the second polymer of the bi-polymer structure, doping the pillars, and depositing a high-k metal gate (HKMG) over the first and second regions to form the MIS capacitor in the second region of the semiconductor substrate.
Claims20
A method for forming a metal-insulator-semiconductor (MIS) capacitor over a semiconductor substrate, the method comprising:
- forming a plurality of fins;
- depositing a polymer between the plurality of fins;
- forming pillars by selectively removing the polymer and recessing the semiconductor substrate;
- depositing a dielectric between the pillars such that a top surface of the pillars is exposed;
- forming a first spacer over the pillars;
- and
- applying a first mask over the plurality of fins to etch the first spacer formed over the pillars.
A method for forming a metal-insulator-semiconductor (MIS) capacitor over a semiconductor substrate, the method comprising:
- forming a plurality of fins;
- depositing a polymer between the plurality of fins;
- forming pillars by selectively removing the polymer and recessing the semiconductor substrate;
- depositing a dielectric between the pillars such that a top surface of the pillars is exposed;
- forming a first spacer over the pillars and between the plurality of fins;
- applying a first mask over the plurality of fins;
- etching the first spacer formed over the pillars;
- etching the dielectric deposited between the pillars;
- and
- doping the pillars.
Dependencies are inferred from the claim text.