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US 2018/0122785 A1Published application
Direct bandgap semiconductor bonded to silicon photonics
AssigneeHewlett Packard Enterprise Development LP
InventorsMarco FIORENTINO, Di LIANG, Geza KURCZVEIL, Raymond G. BEAUSOLEIL
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Abstract
According to an example of the present disclosure a direct bandgap (DBG) semiconductor structure is bonded to an assembly comprising a silicon photonics (SiP) wafer and a complementary metal-oxide-semiconductor (CMOS) wafer. The SiP wafer includes photonics circuitry and the CMOS wafer includes electronic circuitry. The direct bandgap (DBG) semiconductor structure is optically coupled to the photonics circuitry
Claims20
A method comprising:
- receiving an assembly comprising a silicon photonics (SiP) wafer bonded to a complementary metal-oxide-semiconductor (CMOS) wafer, wherein the SiP wafer includes photonics circuitry and the CMOS wafer includes electronic circuitry;
- and
- after receiving the assembly:
- bonding a direct bandgap (DBG) semiconductor structure to the SiP wafer;
- optically coupling the direct bandgap (DBG) semiconductor structure to the photonics circuitry;
- and
- electrically connecting the DBG semiconductor structure to the electronic circuitry of the CMOS wafer.
4 more elements
A hybrid photonics electronics integrated chip comprising:
- a complementary metal-oxide-semiconductor (CMOS) layer including electronic control circuitry;
- a silicon photonics (SiP) layer bonded to the CMOS layer, the SiP layer including photonics circuitry;
- a direct bandgap (DBG) semiconductor layer bonded to the SiP layer, the DBG semiconductor layer including a DBG semiconductor photonics device which is optically coupled to the photonics circuitry of the SiP layer;
- and
- an electrically conductive line connecting the electronic circuitry of the CMOS layer to the photonics circuitry or to an electrical contact of the DBG semiconductor photonics device.
2 more elements
A hybrid photonics-electronics wafer assembly comprising:
- a complementary metal-oxide-semiconductor (CMOS) wafer including a plurality of electronic integrated circuits;
- a silicon photonics (SiP) wafer bonded to the CMOS wafer, the SiP wafer including a plurality of photonic integrated circuits;
- a direct bandgap (DBG) semiconductor wafer bonded to the SiP wafer, the DBG semiconductor wafer including a plurality of photonic devices;
- wherein each respective photonic device of the DBG semiconductor wafer is optically coupled to a respective photonic integrated circuit of the SiP wafer.
1 more element
Dependencies are inferred from the claim text.