Semiconductor device structure
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsMin-Feng Kao, Dun-Nian Yaung, Jen-Cheng Liu, Jeng-Shyan Lin, Hsun-Ying Huang
Life of this patent
Estimating the term…
Abstract
A semiconductor device structure is provided. The semiconductor device structure has a first surface and a second surface. A first charged layer is disposed over the second surface. A dielectric layer separates a surface of the first charged layer that is closest to the semiconductor substrate from the second surface of the semiconductor substrate. A second charged layer is over the first charged layer. The first charged layer and the second charged layer are different materials and have a same charge polarity.
Claims20
A semiconductor device structure, comprising:
- a semiconductor substrate having a first surface and a second surface;
- a first charged layer disposed over the second surface;
- a dielectric layer separating a surface of the first charged layer that is closest to the semiconductor substrate from the second surface of the semiconductor substrate;
- and
- a second charged layer over the first charged layer, wherein the first charged layer and the second charged layer are different materials and have a same charge polarity.
A semiconductor device structure, comprising:
- a semiconductor substrate having a first surface and a second surface;
- a plurality of interconnect layers arranged within a dielectric structure disposed along the first surface;
- a first charged layer arranged along the second surface;
- and
- a conductive structure extending from one of the plurality of interconnect layers through the semiconductor substrate and the first charged layer.
A semiconductor device structure, comprising:
- a semiconductor substrate having a first surface and a second surface, wherein the semiconductor substrate has a plurality of active regions, the semiconductor substrate is doped with first dopants having a first conductivity, and the plurality of active regions are adjacent to the first surface and are doped with second dopants having a second conductivity;
- a doped layer disposed along the second surface, wherein the doped layer is doped with third dopants having the first conductivity;
- and
- a passivation layer separated from the semiconductor substrate by the doped layer.
Dependencies are inferred from the claim text.