Method for fabricating a local interconnect in a semiconductor device
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJui-Yao LAI, Sai-Hooi YEONG, Ying-Yan CHEN
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Abstract
A semiconductor device includes a first transistor having a first gate, a first source and a first drain, a second transistor having a second gate, a second source and a second drain, an isolation region separating the first transistor from the second transistor, and a local interconnect connecting at least one of the first source and the first drain to at least the second source and the second drain. The local interconnect is in contact with a surface of the at least one of the first source and the first drain, a surface of the at least the second source and the second drain and a surface of a part of the isolation region.
Claims20
A semiconductor device comprising:
- a first transistor having a first gate, a first source and a first drain;
- a second transistor having a second gate, a second source and a second drain;
- an isolation region formed by an insulating material and separating the first transistor from the second transistor;
- and
- a local interconnect electrically connecting at least one of the first source and the first drain to at least the second source and the second drain, wherein:
- the local interconnect is in contact with a surface of the at least one of the first source and the first drain, a surface of the at least the second source and the second drain and an upper surface of a part of the isolation region, and
- the local interconnect has a crank handle shape in a plan view.
A semiconductor device comprising:
- a first transistor having a first gate, a first source and a first drain;
- a second transistor having a second gate, a second source and a second drain;
- an isolation region formed by an insulating material and separating the first transistor from the second transistor;
- and
- a local interconnect electrically connecting at least one of the first source and the first drain to at least the second source and the second drain, wherein:
- the local interconnect is in contact with a surface of the at least one of the first source and the first drain, a surface of the at least the second source and the second drain and an upper surface of a part of the isolation region,
- the first gate is provided with first sidewall spacer layers, and
- an uppermost portion of the local interconnect is located at the same level as an uppermost portion of the first sidewall spacer layers.
A semiconductor device comprising:
- a first source/drain region;
- a second source/drain region;
- an isolation region separating the first source/drain region and the second source/drain region;
- a gate extending and disposed over the first source source/drain region, the second source/drain region and the isolation region;
- and
- a local interconnect electrically connecting a part of the first source/drain region and a part of the second source/drain region,
- wherein the local interconnect is in contact with an upper surface of a part of the isolation region.
Dependencies are inferred from the claim text.