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US 2018/0122718 A1Published application
Semiconductor device and method of manufacturing the same
AssigneeMitsubishi Electric Corporation
InventorsTakayuki HISAKA, Masahiro TOTSUKA, Tasuku SUMINO
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Abstract
A semiconductor device includes: a semiconductor substrate; a gate electrode on the semiconductor substrate; a SiN film on the semiconductor substrate and the gate electrode; and an oxide film on the SiN film, wherein the oxide film is an atomic layer deposition film including atomic layers alternately deposited.
Claims7
A semiconductor device comprising:
- a semiconductor substrate;
- a gate electrode on the semiconductor substrate;
- a SiN film on the semiconductor substrate and the gate electrode;
- and
- an oxide film on the SiN film,
- wherein the oxide film is an atomic layer deposition film including atomic layers alternately deposited.
3 more elements
A semiconductor device comprising:
- a semiconductor substrate;
- a gate electrode on the semiconductor substrate;
- an oxide film on the semiconductor substrate and the gate electrode;
- and
- a SiN film on the semiconductor substrate and at least a peripheral portion of the oxide film,
- wherein the oxide film is an atomic layer deposition film including atomic layers alternately deposited.
3 more elements
A method of manufacturing a semiconductor device comprising:
- forming a gate electrode on a semiconductor substrate;
- immediately after performing N2 plasma treatment to the semiconductor substrate in a plasma CVD apparatus, forming a SIN film on the gate electrode by plasma CVD;
- and
- forming an oxide film on the SiN film by atomic layer deposition process.
1 more element
A method of manufacturing a semiconductor device comprising:
- forming a gate electrode on a semiconductor substrate;
- forming an oxide film on the semiconductor substrate and the gate electrode by atomic layer deposition process;
- and
- immediately after performing N2 plasma treatment to the semiconductor substrate, forming a SiN film on the semiconductor substrate and at least a peripheral portion of the oxide film by plasma CVD.
1 more element
A method of manufacturing a semiconductor device comprising:
- forming:
- a gate electrode on a semiconductor substrate;
- and
- immediately after performing N2 plasma treatment to the semiconductor substrate, forming a nitride film on the semiconductor substrate and the gate electrode by atomic layer deposition process.
1 more element
Dependencies are inferred from the claim text.