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US 2018/0122717 A1Published application
Method of manufacturing semiconductor device
AssigneeToyota Jidosha Kabushiki Kaisha
InventorMasaru OKUDA
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Abstract
A method of manufacturing a semiconductor device, the method may include: forming a SOG film on a wafer, the wafer including a semiconductor substrate and a polyimide film exposed on a surface of the wafer, and the SOG film being formed so as to cover the polyimide film; applying a protection tape on a surface of the SOG film; processing the wafer on which the protection tape is applied; and peeling the protection tape from the wafer.
Claims3
A method of manufacturing a semiconductor device, the method comprising:
- forming a SOG film on a wafer, the wafer comprising a semiconductor substrate and a polyimide film exposed on a surface of the wafer, and the SOG film being formed so as to cover the polyimide film;
- applying a protection tape on a surface of the SOG film;
- processing the wafer on which the protection tape is applied;
- and
- peeling the protection tape from the wafer.
2 more elements
Dependencies are inferred from the claim text.