Environmental protection for wafer level and package level applications
AssigneeQorvo US, Inc.
InventorsChristo Bojkov, Andrew Ketterson, Robert Charles Dry
Life of this patent
Estimating the term…
Abstract
A method includes the steps of fabricating one or more semiconductor devices on a semiconductor wafer and depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process. By depositing the one or more conformal organic environmental protection layers using a vapor deposition process, thin film conformal organic environmental protection layers may be provided that offer excellent protection against water and oxygen ingress, thus increasing the ruggedness and reliability of the resulting semiconductor die.
Claims20
A method comprising:
- fabricating one or more semiconductor devices on a semiconductor wafer;
- and
- depositing one or more conformal organic environmental protection layers over the semiconductor wafer using a vapor deposition process.
A method comprising:
- fabricating an integrated circuit package;
- and
- depositing one or more conformal organic environmental protection layers over the integrated circuit package using a vapor deposition process.
A semiconductor die comprising:
- a substrate;
- and
- one or more conformal organic environmental protection layers over the substrate, wherein each of the one or more conformal organic environmental protection layers is deposited using a vapor deposition process such that a thickness of each of the one or more conformal organic environmental protection layers is less than 10,000 Å.
Dependencies are inferred from the claim text.