Selective surface treatment of thallium bromide (tlbr)-based detectors to improve longevity and/or restore operational capacity thereof

A method of forming a thallium bromide (TlBr)-based detector exhibiting improved operational longevity, the method comprising:

• selectively treating one or more surfaces of the TlBr-based detector to replace Br therein with one or more alternate halogen components while also substantially avoiding replacing some or all of the Br in other surfaces of the TlBr-based detector with the one or more alternate halogen components;
• and
• wherein the one or more surfaces substantially comprise pure TlBr following the selective treatment thereof;
• and
• wherein the one or more surfaces comprise at least sidewalls of the TlBr based detector.

A method of selectively treating one or more surfaces of a thallium bromide (TlBr)-based detector to improve operational longevity thereof or restore operational capability as a room temperature detector thereto, the method comprising:

• detecting either a failure of the TlBr-based detector or degradation of one or more surfaces of the TlBr-based detector, the failure or degradation comprising formation of a complete or partial conductive pathway between electrodes coupled to the TlBr-based detector;
• and
• selectively treating at least portions of the one or more surfaces of the TlBr-based detector exhibiting either the failure or the degradation, wherein selectively treating the at least portions of the one or more surfaces of the TlBr-based detector comprises etching the at least portions of the one or more surfaces of the TlBr-based detector with a solution comprising an etchant selected from:
• water, bromine methanol, a peroxide, ammonium hydroxide, and potassium hydroxide;
• and
• wherein the at least portions that are etched substantially comprise pure TlBr following the selective treatment.

A thallium bromide (TlBr)-based detector, comprising:

• a bulk portion comprising TlBr, the bulk portion having one or more sidewalls, a top surface, and a bottom surface;
• and
• wherein at least the sidewalls of the bulk portion comprise substantially no alternate halogen component(s) to a predetermined depth in a range from approximately 0.1 μm to approximately 100 μm from the sidewalls of the bulk portion;
• wherein first portions of the top surface of the bulk portion comprise one or more alternate halogen components to a predetermined depth in a range from approximately 0.1 μm to approximately 100 μm from the top surface of the bulk portion;
• wherein other portions of the top surface of the bulk portion comprise substantially no alternate halogen components to a predetermined depth in a range from approximately 0.1 μm to approximately 100 μm from the top surface of the bulk portion;
• and
• wherein the first portions of the top surface correspond to positions on the top surface of the detector to which one or more electrodes are configured to couple.