Semiconductor structure and fabrication method thereof
AssigneesSemiconductor Manufacturing International (Shanghai) Corporation, Semiconductor Manufacturing International (Beijing) Corporation
InventorYong LI
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Abstract
A semiconductor structure and a fabrication method are provided. A fabrication method includes providing a substrate including an NMOS region and a PMOS region; forming a first high-K gate dielectric layer on the NMOS region of the substrate; forming an interfacial layer on the PMOS region of the substrate; forming a second high-K gate dielectric layer on the interfacial layer and the first high-K gate dielectric layer; forming a metal layer on the second high-K gate dielectric layer.
Claims20
A method of forming a semiconductor structure, comprising:
- providing a substrate including an NMOS region and a PMOS region;
- forming a first high-K gate dielectric layer on the NMOS region of the substrate;
- forming an interfacial layer on the PMOS region of the substrate;
- forming a second high-K gate dielectric layer on the interfacial layer and the first high-K gate dielectric layer;
- and
- forming a metal layer on the second high-K gate dielectric layer.
A semiconductor structure, comprising:
- a substrate, including an NMOS region and a PMOS region;
- a first gate structure, including a first high-K gate dielectric layer on the NMOS region of the substrate, a second high-K gate dielectric layer on the first high-K gate dielectric layer, and a metal layer on the second high-K gate dielectric layer;
- and
- a second gate structure, including an interfacial layer on the PMOS region of the substrate, the second high-K gate dielectric layer on the interfacial layer, and the metal layer on the second high-K gate dielectric layer.
Dependencies are inferred from the claim text.