Through substrate via (tsv) and method therefor
AssigneeFreescale Semiconductor, Inc.
InventorsQING ZHANG, LIANJUN LIU
Life of this patent
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Abstract
A through substrate via (TSV) and method of forming the same are provided. The method of making the TSV may include etching a via opening into the backside of semiconductor substrate, the via opening exposing a surface of a metal landing structure. A conductive layer is deposited over the backside of semiconductor substrate, sidewalls of the via opening, and exposed surface of the metal landing structure. The conductive layer is coated with a polymer material, filling the via opening. The polymer material is developed to remove the polymer material from the backside of semiconductor substrate, leaving the via opening filled with undeveloped polymer material. A planar backside surface of semiconductor substrate is formed by removing the conductive layer.
Claims22
A method of forming a through substrate via (TSV) in a semiconductor substrate, comprising:
- etching a vertical via opening into the backside of semiconductor substrate, the via opening exposing a surface of an embedded metal landing structure;
- depositing a conductive layer over the backside of semiconductor substrate, sidewalls of the via opening, and exposed surface of the metal landing structure;
- coating the conductive layer with a photoresist polymer material, the photoresist polymer material filling remaining portion of the via opening;
- developing the photoresist polymer material to remove the photoresist polymer material from the backside of semiconductor substrate and leaving the remaining portion of the via opening substantially filled with undeveloped photoresist polymer material;
- hard-baking the undeveloped photoresist polymer material to cross-link the photoresist polymer material;
- and
- forming a planar backside surface of semiconductor substrate by removing the conductive layer deposited over the backside of semiconductor substrate.
(canceled)
A method of forming a through substrate via (TSV) in a semiconductor substrate, comprising:
- etching a vertical via opening into the backside of semiconductor substrate, the via opening exposing a surface of an embedded metal landing structure;
- depositing a dielectric layer over the backside of semiconductor substrate and sidewalls of the via opening;
- depositing a conductive layer over the dielectric layer and exposed surface of the metal landing structure;
- coating the conductive layer with a photoresist polymer material, the photoresist polymer material filling remaining portion of the via opening;
- developing the photoresist polymer material to remove the photoresist polymer material from the backside of semiconductor substrate and leaving the remaining portion of the via opening substantially filled with undeveloped photoresist polymer;
- hard-baking the undeveloped photoresist polymer material to cross-link the photoresist polymer material;
- and
- using a chemical-mechanical planarization (CMP) process to remove conductive layer over the backside of semiconductor substrate, leaving underlying dielectric layer substantially intact.
(canceled)
A semiconductor device, comprising:
- a semiconductor substrate having an active side and a backside;
- a metal landing structure embedded in the active side;
- a via opening formed in the backside of the semiconductor substrate, the via opening exposing a surface of the metal landing structure;
- a conductive layer formed over the sidewalls of the via opening and exposed surface of the metal landing structure;
- and
- a photoresist polymer material disposed within the via opening, a surface of the photoresist polymer in the same plane as a surface of the backside of the semiconductor substrate.
Dependencies are inferred from the claim text.