Semiconductor device and method of forming the semiconductor device
AssigneeInternational Business Machines Corporation
InventorsLawrence A. Clevenger, Baozhen Li, Kirk David Peterson, John E. Sheets, II, Junli Wang, Chih-Chao Yang
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Abstract
A method of forming a semiconductor device includes forming a sacrificial layer in a first contact hole of a first dielectric layer, forming a second dielectric layer on the first dielectric layer, and forming a second contact hole in the second dielectric layer, the second contact hole being aligned with the first contact hole, removing the sacrificial layer from the first contact hole, and forming a copper contact in the first and second contact holes.
Claims20
A method of forming a semiconductor device, the method comprising:
- forming a sacrificial layer in a first contact hole of a first dielectric layer;
- forming a second dielectric layer on the first dielectric layer, and forming a second contact hole in the second dielectric layer, the second contact hole being aligned with the first contact hole;
- removing the sacrificial layer from the first contact hole;
- and
- forming a copper contact in the first and second contact holes.
A method of forming a semiconductor device, the method comprising:
- forming a first liner layer in a first contact hole of a first dielectric layer;
- forming a sacrificial layer on the first liner layer to fill the first contact hole;
- forming a second dielectric layer on the first dielectric layer, and forming a second contact hole in the second dielectric layer, the second contact hole being aligned with the first contact hole;
- forming a second liner layer on the second dielectric layer and in the second contact hole;
- removing the sacrificial layer from the first contact hole;
- and
- forming a copper contact in the first and second contact holes.
A semiconductor device, comprising:
- a first dielectric layer comprising a first contact hole;
- a second dielectric layer formed on the first dielectric layer, and comprising a second contact hole aligned with the first contact hole;
- and
- a reflowed copper layer formed in the first and second contact holes.
Dependencies are inferred from the claim text.