Co or ni and cu integration for small and large features in integrated circuits

A microfeature workpiece, comprising:

• at least two features of two different sizes disposed in a dielectric, wherein a width of a first feature is less than or equal to 17 nm and wherein the first feature is filled with cobalt or nickel, and wherein a width of a second feature is greater than 20 nm and wherein the second feature is filled with a stack layer of cobalt or nickel and copper, wherein the microfeature workpiece is formed by electrochemically depositing a second metal layer after a first metal layer on the workpiece, wherein the second metal layer is a copper layer and wherein the first metal layer includes a metal selected from one of a group consisting of cobalt and nickel, wherein the first metal layer completely fills the first feature of the at least two features but does not completely fill the second feature of the at least two features.

workpiece of claim 8, wherein the second metal layer is deposited over an entire surface of the first metal layer.

workpiece of claim 9, wherein heat treating the workpiece anneals the first and second metal layers.

The workpiece of claim 18, wherein the third metal layer is an overburden, a cap, a fill layer, a conformal conductive layer, or a superconformal conductive layer.

The workpiece of claim 20, further comprising depositing a second seed layer on the first seed layer prior to deposition of the second metal layer.

The workpiece of claim 21, wherein the second seed layer is different metal composition from the first seed layer.