Back to results
US 2018/0122693 A1Published application
Method for forming semiconductor structure
AssigneeUnited Microelectronics Corp.
InventorsWen-Yu Yang, Chien-Hua Shih, Hsin-Yi Chung, Shu-Hui Hu
Life of this patent
Estimating the term…
Abstract
A method for forming a semiconductor structure is provided, including the following steps. A first dielectric layer is formed on a substrate. An etching step is performed to the first dielectric layer. A N2O treating step is performed to an etched surface of the first dielectric layer. A second dielectric layer is formed on a N2O treated surface of the first dielectric layer.
Claims20
A method for forming a semiconductor structure, comprising:
- forming a first dielectric layer on a substrate;
- performing an etching step to the first dielectric layer, wherein the etching step uses a fluorine containing etchant;
- performing a N2O treating step to an etched surface of the first dielectric layer;
- and
- forming a second dielectric layer on a N2O treated surface of the first dielectric layer.
2 more elements
(canceled)
Dependencies are inferred from the claim text.