US 2018/0122689 A1 · CONTACT MODULE FOR OPTIMIZING EMITTER AND CONTACT RESISTANCE

Abstract

An advanced contact module for optimizing emitter and contact resistance and methods of manufacture are disclosed. The method includes forming a first contact via to a first portion of a first device. The method further includes filling the first contact via with metal material to form a first metal contact to the first portion of the first device. The method further includes forming additional contact vias to other portions of the first device and contacts of a second device. The method further includes cleaning the additional contact vias while protecting the first metal contact of the first portion of the first device. The method further includes filling the additional contact vias with metal material to form additional metal contacts to the other portions of the first device and the second device.

Claims17

Dependent claims

A structure, comprising:

a transistor on a substrate;
a bipolar transistor on the substrate, the bipolar transistor comprising an emitter region, a base region, and a collector region;
a dielectric layer on the transistor and the bipolar transistor;
a first contact extending from a top surface of the dielectric layer to a non-silicided region of the emitter region, wherein excess metal of the contact is on the upper surface of the dielectric layer;
and
plural second contacts extending from the top surface of the dielectric layer to respective silicide regions of the base region, the collector region, and the transistor.

3 more elements

Dependencies are inferred from the claim text.

Contact module for optimizing emitter and contact resistance

Life of this patent

Contact module for optimizing emitter and contact resistance

Life of this patent

Abstract

Claims17