Disubstituted Alkyne Dicobalt Hexacarbonyl Compounds, Method of Making and Method of Use Thereof

A method of selectively depositing cobalt on a substrate in a reactor, comprising steps of:

• providing the substrate to the reactor wherein the substrate comprises at least one patterned dielectric layer and at least one patterned conductive metal layer;
• performing a pre-treatment to remove contaminates from surface of the substrate comprising at least surface of the at least one patterned conductive metal layer;
• providing a Co precursor to the reactor;
• contacting the substrate with the Co precursor;
• and
• forming Co containing film on the substrate;
• wherein
• the Co precursor is a disubstituted alkyne dicobalt carbonyl hexacarbonyl compound having the formula Co2(CO)6 (R1C≡CR2);
• wherein R1 is a tertiary alkyl group and R2 is a linear alkyl group, isopropyl and isobutyl;
• and
• the Co containing film is selectively formed on the at least one patterned conductive metal layer with ratio of thickness of cobalt containing film formed on the at least one patterned conductive metal layer vs formed on the at least one patterned dielectric layer >1.