Back to results
US 2018/0122686 A1Published application
3d semiconductor device and structure
AssigneeMonolithic 3D Inc.
InventorsZvi Or-Bach, Zeev Wurman
Life of this patent
Estimating the term…
Abstract
A 3D device, the device including: a first stratum including an array of memory bit cells, the array of memory bit cells is controlled via a plurality of bit-lines and a plurality of word-lines; and a second stratum overlaying the first stratum, the second stratum including memory control circuits, where the control circuits provide control of the plurality of bit-lines and the plurality of word-lines.
Claims20
A 3D device, the device comprising:
- a first stratum comprising an array of memory bit cells, said array of memory bit cells is controlled via a plurality of bit-lines and a plurality of word-lines;
- and
- a second stratum overlaying said first stratum, said second stratum comprising memory control circuits,
- wherein said control circuits provide control of said plurality of bit-lines and said plurality of word-lines.
1 more element
A 3D device, the device comprising:
- a first stratum comprising an array of memory bit cells, said array of memory bit cells controlled via a plurality of bit-lines and a plurality of word-lines;
- and
- a second stratum underlying said first stratum, said second stratum comprising memory control circuits,
- wherein said memory control circuits provide control of said plurality of bit-lines and said plurality of word-lines.
1 more element
A 3D device, the device comprising:
- a first stratum comprising an array of memory bit cells, said array of memory bit cells controlled by a plurality of memory control-lines;
- and
- a second stratum overlaying or underlying said first stratum comprising memory control circuits,
- wherein said memory control circuits provide control of said plurality of memory control-lines.
1 more element
Dependencies are inferred from the claim text.