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US 2018/0122652 A1Published application
Method of ROI Encapsulation During Axis Conversion of Cross-Sectional TEM Lamellae
AssigneeQUALCOMM Incorporated
InventorCorey Senowitz
Life of this patent
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Abstract
An axis conversion technique is provided for the milling of lamellae for TEM analysis that includes a sputter deposition to prevent warpage of the axis-converted lamellae.
Claims20
A method, comprising:
- milling a semiconductor device along a first axis to form a first-axis-directed lamella;
- depositing the first-axis-directed lamella with a strengthening material to form a coated first-axis-directed lamella;
- milling the coated first axis-directed lamella along a second axis to form a second-axis-directed lamella.
An axis-converted lamella of a semiconductor device, comprising:
- a first-axis-directed face along a region of interest (ROI) of the semiconductor device;
- a pair of second-axis-directed faces substantially orthogonal to the first-axis-directed face;
- and
- a strengthening material layer covering only the pair of second-axis-directed faces.
1 more element
An axis-converted lamella of a fin-shaped field effect transistor (FinFET), comprising;
- a portion of a fin, wherein the portion has a first pair of faces that are parallel to a longitudinal axis of a gate associated with the fin and has a second pair of faces that are parallel to a longitudinal axis of the fin;
- and
- a sputter-deposited strengthening material covering the first pair of faces.
An axis-converted lamella of a fin-shaped field effect transistor (FinFET), comprising;
- a portion of a fin, wherein the portion has a first pair of faces that are parallel to a longitudinal axis of a gate associated with the fin and has a second pair of faces that are parallel to a longitudinal axis of the fin;
- and
- a sputter-deposited strengthening material covering the second pair of faces.
Dependencies are inferred from the claim text.