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US 2018/0122651 A1Published application
Plasma etching method
AssigneeHitachi High-Technologies Corporation
InventorsRyo ISHIMARU, Satoshi UNE, Masahito MORI
Life of this patent
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Abstract
A plasma etching method for etching a film containing a tungsten element using plasma, wherein the film containing a tungsten element is etched by using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.
Claims4
A plasma etching method for etching a film containing a tungsten element using plasma, the method comprising:
- etching the film containing a tungsten element by plasma generated using a gas containing a silicon element, a gas containing a halogen element, and a gas containing a carbon element and an oxygen element.
A plasma etching method for etching a film containing a tungsten element using plasma, the method comprising:
- etching the film containing a tungsten element by using a mixed gas of Cl2 gas, SiCl4 gas, oxygen gas, and CO gas, a mixed gas of Cl2 gas, SiCl4 gas, oxygen gas, and CO2 gas, or a mixed gas of Cl2 gas, SiCl4 gas, oxygen gas, and COS gas.
Dependencies are inferred from the claim text.