Hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication
AssigneesInternational Business Machines Corporation, Zeon Corporation
InventorsRobert L. Bruce, Eric A. Joseph, Joe Lee, Takefumi Suzuki
Life of this patent
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Abstract
In one embodiment, a method for hydrofluorocarbon gas-assisted plasma etch for interconnect fabrication includes providing a layer of a dielectric material and etching a trench in the layer of the dielectric material, by applying a mixture of an aggressive dielectric etch gas and a polymerizing etch gas to the layer of the dielectric material. In another embodiment, an integrated circuit includes a plurality of semiconductor devices and a plurality of conductive lines connecting the plurality of semiconductor devices. A pitch of the plurality of conductive lines is approximately twenty-eight nanometers.
Claims20
An integrated circuit, comprising:
- a plurality of semiconductor devices;
- and
- a plurality of conductive lines connecting the plurality of semiconductor devices, wherein a pitch of the plurality of conductive lines is approximately twenty-eight nanometers.
An integrated circuit, comprising:
- a front end, comprising:
- a semiconductor wafer;
- and
- a plurality of semiconductor devices formed on the semiconductor wafer;
- and
- a back end, comprising:
- a dielectric layer;
- and
- a plurality of conductive lines formed in the dielectric layer, wherein a pattern density of the plurality of conductive lines has a pitch of approximately twenty-eight nanometers.
An integrated circuit, comprising:
- a front end, comprising:
- a semiconductor wafer;
- and
- a plurality of semiconductor devices formed on the semiconductor wafer;
- and
- a back end, comprising:
- a dielectric layer;
- a plurality of conductive lines formed in the dielectric layer, wherein the plurality of conductive lines has a uniform profile and a pattern density of the plurality of conductive lines has a pitch of approximately twenty-eight nanometers;
- and
- a capping layer positioned directly between the dielectric layer and the front end.
Dependencies are inferred from the claim text.